The Influence of Interfacial Effects on the Electron Spectrum of GaAs/AlGaAs Structures Used for the Creation of Mid-IR Photodetectors
TECHNICAL PHYSICS LETTERS
Krivobok, VS; Pashkeev, DA; Litvinov, DA; Grigor'eva, LN; Kolosov, SA
2020г. т. 46 номер 3 стр.. 256-259 тип: публикация в журнале

DOI - 10.1134/S1063785020030256
WoS id - WOS:000529352900015

Study of Single-Electron Spectrum of GaAs/AlGaAs Heterostructure for Mid-IR Photodetectors via Low-Temperature Luminescence
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE
Litvinov, DA; Pashkeev, DA; Grigoreva, LN; Kolosov, SA; Aminev, DF
2020г. т. 47 номер 4 стр.. 105-109 тип: публикация в журнале

DOI - 10.3103/S1068335620040041
WoS id - WOS:000540138700002

Excitonic Effects and Impurity-Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors
SEMICONDUCTORS
Krivobok, VS; Litvinov, DA; Nikolaev, SN; Onishchenko, EE; Pashkeev, DA; Chernopittsky, MA; Gr
2019г. т. 53 номер 12 стр.. 1608-1616 (цит. wos) 2 тип: публикация в журнале

DOI - 10.1134/S1063782619160139
WoS id - WOS:000510631800009

Separation of Quantum Emitters Produced by Single Donor-Acceptor Pairs Under Laser Excitation
JOURNAL OF RUSSIAN LASER RESEARCH
Bagaev, VS; Krivobok, VS; Chentsov, SI; Onishchenko, EE; Pruchkina, AA; Nikolaev, SN; Chernopitssky, MA все авторы
2019г. т. 40 номер 3 стр.. 274-279 тип: публикация в журнале

DOI - 10.1007/s10946-019-09802-7
WoS id - WOS:000481769400012