Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy
SEMICONDUCTORS
Lovygin, MV; Borgardt, NI; Seibt, M; Kazakov, IP; Tsikunov, AV
2015г. т. 49 номер 13 стр.. 1714-1717 тип: публикация в журнале

DOI - 10.1134/S1063782615130102
Scopus id - 2-s2.0-84949963913
WoS id - WOS:000366649500008

Diagnostics of heterostructures of resonant-tunneling diodes during epitaxial growth. II. Monitoring techniques based on reflection method
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE
Kazakov, IP; Bazalevskii, MA; Kapaev, VV; Tsekhosh, VI
2013г. т. 40 номер 3 стр.. 68-73 тип: публикация в журнале

DOI - 10.3103/S1068335613030032
Scopus id - 2-s2.0-84876010516
WoS id - WOS:000317128400003
Science Index - 20431015

Single-well resonant-tunneling diode heterostructures based on In0.53Ga0.47As/AlAs/InP with the peak-to-valley current ratio of 22:1 at room temperature
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE
Syzranov, VS; Klimenko, OA; Ermolov, AS; Kazakov, IP; Shmelev, SS; Egorkin, VI; Murzin, VN
2013г. т. 40 номер 8 стр.. 240-243 (цит. wos) 1 тип: публикация в журнале

DOI - 10.3103/S106833561308006X
Scopus id - 2-s2.0-84884142122
WoS id - WOS:000324330800006
Science Index - 20455324

Comprehensive study of structural and optical properties of LT-GaAs epitaxial structures
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE
Burbaev, TM; Gorbatsevich, AA; Egorkin, VI; Kazakov, IP; Martovitskii, VP; Mel'nik, NN; Mityagin, YA все авторы
2013г. т. 40 номер 8 стр.. 219-224 (цит. wos) 3 тип: публикация в журнале

DOI - 10.3103/S1068335613080022
Scopus id - 2-s2.0-84884154869
WoS id - WOS:000324330800002
Science Index - 20455447

The novel THz generation and detection possibilities of resonant-tunneling based semiconductor multiple-quantum well nanostructures
INTERNATIONAL CONFERENCE MICRO- AND NANO-ELECTRONICS 2012
Karuzskii, AL; Kapaev, VV; Murzin, VN; Mityagin, YA; Savinov, SA; Perestoronin, AV; Tshovrebov, AM все авторы
2012г. т. 8700 номер стр.. - тип:

DOI - 10.1117/12.2017876
Scopus id - 2-s2.0-84880238864
WoS id - WOS:000322818600024
Science Index - 20473880

Diagnostics of heterostructures of resonant-tunneling diodes during epitaxial growth. I. Estimation of the required accuracy of heterostructure growth
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE
Kazakov, IP; Bazalevskii, MA; Kapaev, VV; Tsekhosh, VI
2012г. т. 39 номер 10 стр.. 284-288 (цит. wos) 1 тип: публикация в журнале

DOI - 10.3103/S1068335612100028
Scopus id - 2-s2.0-84868703617
WoS id - WOS:000310744200002
Science Index - 20490438

Photoreflectance study of indium segregation in the InGaAs quantum well
16TH INTERNATIONAL SCHOOL ON QUANTUM ELECTRONICS: LASER PHYSICS AND APPLICATIONS
Avakyants, LP; Bokov, PY; Chervyakov, AV; Glazyrin, EA; Kazakov, IP
2011г. т. 7747 номер стр.. - тип:

DOI - 10.1117/12.882842
Scopus id - 2-s2.0-79951746395
WoS id - WOS:000293456700022
Science Index - 16845663

Photoreflectance spectroscopy of electron-hole states in a graded-width GaAs/InGaAs/GaAs quantum well
SEMICONDUCTORS
Avakyants, LP; Bokov, PY; Glazyrin, EV; Kazakov, IP; Chervyakov, AV
2011г. т. 45 номер 3 стр.. 320-324 тип: публикация в журнале

DOI - 10.1134/S1063782611030043
Scopus id - 2-s2.0-79955020816
WoS id - WOS:000289573000010
Science Index - 16989128

Automated control system of a molecular-beam epitaxy setup
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE
Kazakov, IP; Tsekhosh, VI; Igonin, ME; Fofanova, LA; Shemyakin, SN
2010г. т. 37 номер 5 стр.. 131-135 тип: публикация в журнале

DOI - 10.3103/S1068335610050027
WoS id - WOS:000278413300002

In situ optical diagnostics of growing surfaces in the process of nanoheterostructure fabrication
SEMICONDUCTORS
Kazakov, IP; Glazyrin, EV; Savinov, SA; Tsekhosh, VI; Shmelev, SS
2010г. т. 44 номер 11 стр.. 1441-1445 (цит. wos) 1 тип: публикация в журнале

DOI - 10.1134/S1063782610110126
WoS id - WOS:000284428900012

Peculiarities of the thermal activation of carriers in CdSe/ZnSe QD structures
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Borkovska, L; Korsunska, N; Venger, Y; Sadofyev, Y; Kazakov, I; Kryshtab, T
2009г. т. 20 номер стр.. 102-106 (цит. wos) 1 тип: публикация в журнале

DOI - 10.1007/s10854-007-9457-4
WoS id - WOS:000262106900021

A new type of structural defects in CdZnSe/ZnSe heterostructures
MICROELECTRONICS JOURNAL
Borkovska, L; Korsunska, N; Kladko, V; Slobodyan, M; Yefanov, O; Venger, Y; Kryshtab, T; Sadofyev, Y все авторы
2008г. т. 39 номер 3-4 стр.. 589-593 (цит. wos) 7 тип: публикация в журнале

DOI - 10.1016/j.mejo.2007.07.040
WoS id - WOS:000255600600071

Temperature dependence of photoluminescence of CdSe/ZnSe quantum dots grown on GaAs and Si/Ge virtual substrates
PHYSICS OF SEMICONDUCTORS, PTS A AND B
Onishchenko, EE; Bagaev, VS; Kazakov, IP; Rzaev, MM
2007г. т. 893 номер стр.. 931-+ тип:

Scopus id - 2-s2.0-84954041360
WoS id - WOS:000246281800458

Determination of the carrier concentration in doped n-GaAs layers by Raman and light reflection spectroscopies
OPTICS AND SPECTROSCOPY
Avakyants, LP; Bokov, PY; Volchkov, NA; Kazakov, IP; Chervyakov, AV
2007г. т. 102 номер 5 стр.. 712-716 (цит. wos) 2 тип: публикация в журнале

DOI - 10.1134/S0030400X07050104
WoS id - WOS:000246844500010

Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Borkovska, LV; Korsunska, NO; Sadofyev, YG; Beyer, R; Weber, J; Kryshtab, T; Andraca-Adame, JA; Kazakov, IP все авторы
2007г. т. 244 номер 5 стр.. 1700-1705 (цит. wos) 10 тип: публикация в журнале

DOI - 10.1002/pssb.200675138
WoS id - WOS:000246567200048

A ZnSe/ZnMgSSe nanostructure for a laser electron-beam tube emitting in the blue spectral region
QUANTUM ELECTRONICS
Kazakov, IP; Kozlovsky, VI; Martovitsky, VP; Skasyrsky, YK; Popov, YM; Kuznetsov, PI; Yakushcheva, GG все авторы
2007г. т. 37 номер 9 стр.. 857-862 (цит. wos) 2 тип: публикация в журнале

DOI - 10.1070/QE2007v037n09ABEH013530
WoS id - WOS:000252309000011

MBE growth and study of Cr2+: Znse layers for mid-IR lasers
INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NO 5
Kazakov, IP; Mirov, SB; Fedorov, VV; Gallian, A; Kernal, J; Allman, J; Zabezhaylov, AO; Dianov, EM
2007г. т. 6 номер 5 стр.. 403-+ тип:

DOI - 10.1142/S0219581X07004481
WoS id - WOS:000255632800021

MBE grown ZnSSe/ZnMgSSe MQW structure for blue VCSEL
INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NO 5
Kazakov, IP; Kozlovsky, VI; Martovitsky, VP; Skasyrsky, YK; Tiberi, MD; Zabezhaylov, AO; Dianov, E
2007г. т. 6 номер 5 стр.. 407-+ (цит. wos) 2 тип:

DOI - 10.1142/S0219581X07004493
WoS id - WOS:000255632800022

Temperature dependence of photoluminescence of CdSe/ZnSe quantum dots gown on GaAs and Si/Ge virtual substrates
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11
Onishchenko, EE; Bagaev, VS; Kazakov, IP; Rzaev, MM
2006г. т. 3 номер 11 стр.. 3963-+ тип:

DOI - 10.1002/pssc.200671599
WoS id - WOS:000245037200077

Growth, structural and optical studies of CdSe/ZnSe nanostructures grown by MBE on GaAs and Si substrates
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3
Rzaev, MM; Kazakov, IP; Kozlovski, VI; Skasyrsky, YK; Onishchenko, EE; Schaffler, F; Hesser, G; Pashaev, EM все авторы
2006г. т. 3 номер 3 стр.. 536-+ (цит. wos) 3 тип:

DOI - 10.1002/pssc.200564155
WoS id - WOS:000236810000039